Bipolar Transistor Reference Data

From the compiler

This reference book is an attempt to combine in one publication the completeness of coverage of instruments, compact presentation of information, and ease of use.

The directory is intended for a wide range of users from developers of radio-electronic devices to radio amateurs.

The reference book presents the main electrical parameters of bipolar transistors. For compactness and ease of use of this reference book, it uses a tabular form of presenting information. In addition to the electrical parameters, the reference book provides overall and connection dimensions, as well as a typical area of ​​application of bipolar transistors. The described approach made it possible to create a compact, convenient and inexpensive reference book that will bring practical benefits to its owner.

The reference book contains parameters of bipolar transistors scattered throughout the domestic literature. Since the main principle in compiling the reference book was the completeness of the nomenclature, for some devices only a few parameters are given (which were given in a scientific article by the developers of the device). As additional information became available, it was included in the reference book.
For some devices, instead of limit parameters, typical parameters are given, when information about limit parameters is not available, but there is information about typical values.

How did this guide come about? In the mid-70s, the compiler of the directory was faced in his work with the lack of a directory that suited himself and his colleagues. Existing directories had many shortcomings, the most obvious of which are described below.

1. Great redundancy:

A) Many reference books had a lot of graphs that were either described quite well by theoretical curves or reflected insignificant dependencies;
b) Most developers are not interested in such parameters as storage time in a warehouse and the degree of resistance of semiconductor devices against the effects of mold and fungi;
c) From 10% to 30% of the volume of reference books was occupied by well-known things - symbols on electrical circuits, classification of devices and similar concepts repeatedly described in various literature.

2. Incompleteness - the long period of passage through publishing houses led to the rapid obsolescence of the reference book. Most of the compilers gravitated towards a certain circle of semiconductor device manufacturers, and while the products of one manufacturer were presented fairly fully, the products of another manufacturer did not include new developments. To work, I had to use several reference books at the same time (especially since different compilers included a different number of parameters known for a given device) and a number of journal articles that described new semiconductor devices.

3. Inconvenient to use - most compilers introduced a breakdown of the directory into parts according to such criteria as power dissipation, operating frequency, type of transition. In addition, very often within a section the material was additionally grouped according to similar principles. All this significantly complicated the search for the right device and especially the comparison of several semiconductor devices according to a number of parameters.

4. Unreliability - during the publishing process, errors accumulated in any reference book. If errors in ordinary text are easily detected during proofreading, then errors in numerical information are difficult to detect even by a specialist.

All the reasons described prompted us to compile a reference book more convenient for the developer of electronic equipment. Thanks to its compact form, the directory is quite cheap and satisfies most needs. If the developer needs more detailed characteristics of a product (this happens quite rarely), he can always turn to either a specialized publication or an industry standard. In his daily work, this little book is enough for him.

The directory was compiled in 1993 and translated into HTML in 2000.

Compiled by: Kozak Viktor Romanovich, email: kozak @ inp.nsk.su

A selection of reference data for domestic bipolar transistors of low, medium and high power. Mainly produced in the Soviet Union

Semiconductor devices low power have permissible power dissipation in the collector junction up to 0.3 W. (By power in this classification we mean the power released at the collector junction of the semiconductor.) Heat is removed from the collector junction to the body along a thin base plate, which has low thermal conductivity. They are designed to work without special heat sinks (radiators). All external terminals are located along the diameter of the bottom and usually the middle terminal is the base one, and the emitter one is located closer to the base one than the collector one.

These semiconductors include devices with power dissipation in the range from 0.3 to 1.5 W

For high power transistors, power dissipation exceeds 1.5 W.

The housing is the main and largest part of the design of absolutely any transistor, which performs a protective function from external influences and is also used for connecting to external circuits using metal leads. The housing types of foreign transistors are standardized to simplify the manufacturing process and use of products in amateur radio practice. The number of typical transistors currently amounts to hundreds.

Each semiconductor device, including the transistor, has its own unique designation, by which it can be identified from a bunch of other radio components and parts.

The main element of a bijunction bipolar transistor is a single crystal of a p- or p-type semiconductor, in which, with the help of impurities, three regions with electron and hole electrical conductivity are created, separated by two p-n junctions (see the figure at the top of the page). If the middle region has electronic conductivity of type p, and the two outer regions have hole type p, then such a transistor has a pnp structure, in contrast to pnp transistors, which have a middle region with hole conductivity and outer regions with electronic conductivity.

The middle region 1 of an n-conductivity semiconductor crystal is called the base. One extreme region 2 with p-conductivity, injecting (emitting) minority charge carriers, is called an emitter, and the other 3, carrying out the extraction (removal) of charge carriers from the base, is called a collector. The base is separated from the emitter and collector by emitter 4 and collector 5 pn junctions. Metal leads (B, E, K) are made from base 1, emitter 2 and collector 3, which pass through insulators in the bottom of the housing.

Transistors are manufactured in sealed metal-glass, metal-ceramic or plastic cases, as well as without cases. Unpackaged transistors are protected from the influence of the external environment by a layer of varnish, resin, fusible glass and are sealed together with the device in which they are pre-mounted. Currently, most transistors, including integrated circuit transistors, are based on silicon with a planar junction type. The use of point transitions is limited due to instability. The base region of the transistors is made with a very small thickness (from 1 to 25 μm). The degree of doping of the regions varies. The concentration of impurities in the emitter is several orders of magnitude higher than in the base. The degree of doping of the base and collector depends on the type of transistor.

In operating mode, constant voltages from external energy sources are connected to the electrodes of the transistors. In addition to constant voltages, signals to be converted are supplied to the electrodes. In this regard, a distinction is made between the input circuit, into which the signal is supplied, and the output circuit, in which the signal is removed from the load. Depending on which of the electrodes is common to the input and output circuits when the transistor is turned on, circuits with a common OB base, a common OE emitter, and a common OC collector are distinguished. In an OB circuit, the input circuit is the emitter circuit, and the output circuit is the collector circuit. In a circuit with OE, the input is the base circuit, and the output is the collector circuit. In a circuit with OK, the input is the base circuit, and the output is the emitter circuit.

The physical processes occurring in transistors with p-p-p and p-p-p structures are the same. In p-p-p transistors, unlike p-p-p transistors, a voltage of reverse polarity is applied and the currents have the opposite direction.

Depending on the polarity of the voltages applied to the emitter and collector junctions, active, cutoff, saturation and inverse modes of switching on the transistor are distinguished.

Active mode is used when amplifying weak signals. In this mode, direct voltage is applied to the emitter junction, and reverse voltage is applied to the collector junction. In the active mode, the emitter injects minority carriers into the base area, and the collector extracts (removes) minority carriers from the base area.

In the cutoff mode, reverse voltages are applied to both junctions, at which the current through the transistor is negligible. In saturation mode, both junctions of the transistor are under forward voltage; In both transitions, carrier injection occurs; the transistor turns into a double diode; the current in the output circuit is maximum at the selected load value and is not controlled by the input circuit current; the transistor is fully open.

Cutoff and saturation modes are commonly used by a transistor in electronic switch circuits. In inverse mode, the functions of the emitter and collector are changed by connecting a direct voltage to the collector junction, and a reverse voltage to the emitter junction. However, due to the asymmetry of the structure and the difference in carrier concentration in the collector and emitter regions, the inverse switching on of the transistor is not equivalent to its normal switching on in the active mode.

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